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05.17.2018 - Intel’s 1101



View Intel-Press related news. p>» Download all images (ZIP, 6 MB) Intel’s 1101 static random access memory (SRAM) was the first high-volume metal-oxide semiconductor (MOS) memory and the first chip to use silicon gates. The device was the result of a challenging development process. The conceptual groundwork for metal-oxide semiconductor memory had been established before Intel’s founding, but no …...

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