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12.12.2006 - AMD and IBM Detail Early Results Using Immersion and Ultra Low-K in 45NM Chips



View AMD related news. San Francisco, CA. -- December 12, 2006 --At the International Electron Device Meeting (IEDM) today, IBM (NYSE: IBM) and AMD (NYSE: AMD) presented papers describing the use of immersion lithography, ultra-low-K interconnect dielectrics, and multiple enhanced transistor strain techniques for application to the 45nm microprocessor process generation....

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NID: 13851 / Submitted by: Sarrgon
Categories: Press Release
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